File name: G10n60a datasheet pdf
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Description: Fast IGBT in NPT-technology% lower Eoff compared to previous generation SGP10N60A VA V °C G10N60A PG-TO SGW10N60A VA V °C G10N60A PG-TO Maximum Ratings Parameter Symbol Value Unit Description: V N-Channel Power MOSFETResults. G10N60A IGBT Datasheet pdfFast IGBT. (2) InverterNPT-Technology for V applications offers G10N60A Hoja de datos, G10N60A datasheet, InfineonFast IGBT in NPT-technology, Hoja Técnica, G10N60A pdf, dataark, wiki, arduino, regulador, amplificador G10NDatasheet. Infineon G10N60A IGBT. The IGBT is insulated-gate bipolar transistor. File SizeKbytes. Equivalent, Catalog. Manufacturer: DIYI Electronic Technology Co., Ltd G10N60A Scheda tecnica (HTML)Infineon Technologies AG. G10N60A Dettagli del prodotto. Fast IGBT in NPT-technology. This is V,A, IGBT. Equivalent, Catalog. DatasheetMbKb/9P. Manufacturer: DIYI Electronic Technology Co., LtdDescription: V N-Channel Power MOSFETResults Infineon G10N60A IGBT. Part: DMG10NTR. DatasheetMbKb/9P. Part: G10N60A. SGB10N60A Fast IGBT in NPT-technology •% lower Eoff compared to previous Download G10N60A Datasheet. Features% lower Eoffcompared to previous generation combined with low conduction lossesShort circuit withstand time –µsDesigned for: (1) Motor controls. SGB10N60A Fast IGBT in NPT-technology •% lower Eoff compared to previous generation combined wit Description. •% lower Eoff compared to previous SGP10N60A VA V °C G10N60A PG-TO SGW10N60A VA V °C G10N60A PG-TO Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CE V DC collector current T C =°C T C = °C I CPulsed collector current, t p limited by T jmax I CpulsTurn off safe operating area V CE ≤ V G10N60A IGBT Datasheet pdfFast IGBT.
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